Gate-Voltage Control Minimizes EMI from IGBTs
by N. Idir Associate, Professor, and J.J. Franchaud, Research Engineer, Université des Sciences et Technologies de Lille, Laboratoire d'Electronique et Electronique de Puissance (L2EP), Villeneuve d'Ascq, France , Power Electronics Technology, Feb 01 2004
Focus:
Acting like an integrated adjustable snubber, the gate-voltage control technique reduces di/dt during turn-on commutation, reducing overcurrents and high-frequency oscillations associated with diode reverse recovery.
What you’ll learn:
- How to minimize EMI generated by IGBTs
- How to reduce di/dt during turn-on commutation of MOSFETs or IGBTs
- How to reduce overcurrent and high-frequency oscillations associated with diode
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