Neutron Induced Failure tests of 3300-V IGBTs for the Spallation Neutron Source Accelerator
by D.L. Borovina, J.T. Bradley III, M. Pieck, R. S. Przeklasa, T. W. Hardek, M. T. Lynch, D. E. Rees, P. J. Tallerico, W. A. Reass, S. A. Wender, B. E. Takala S. C. Ruggles, LANL, Los Alamos, NM 87545, USA, Research Gate, May 12 2003
Focus:
The 1-GeV Spallation Neutron Source (SNS) Accelerator at Oak Ridge National Laboratory
employs a large number of 3300-V rated IGBTs within the converter-modulators that
power the accelerator’s RF transmitters. This paper presents results of a study that
found these IGBTs to be susceptible to cosmic radiation and determined a critical
voltage threshold for these devices above which device failure rates (due to neutron
interaction with the semiconductor material) rise significantly. This voltage
threshold was well below the 3300-V breakdown voltage rating of the IGBTs. This paper
describes the cosmic-radiation induced failure mode, the tests that were conducted to
assess IGBT susceptibility, and analysis of the results including a sample failure
curve. Finally, projections are made on the expected lifetimes and failure rates of
the IGBTs within the SNS accelerator application.
What you’ll learn:
- How to understand the cosmic radiation induced failure mode in IGBTs
- How to test susceptibility of IGBTs to failures caused by neutron interactions associated with cosmic radiation
- How to understand the impact of cosmic radiation on IGBT working voltage
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