Using Kelvin Connections to enhance switching efficiency in SiC FETs
by Dr. Anup Bhalla, VP Engineering at United SiC, Vendor website, Nov 12 2018
Focus:
This four-page article describes the impact of common-source lead inductance on the gate bias
and switching of wide-bandgap power transistors, how the addition of a Kelvin connection to SiC
power devices alleviates this problem, and gate-drive considerations for power supply
designers. The article begins by explaining how internal bond wires and package leads (such as
in the TO-247) add common-source inductance in FETs, which generate transients that can slow
down the turn-off and turn-on of the transistors, particularly fast-switching wide-bandgap
devices. The difficulty of using negative gate drive to counter the problem is discussed and
the benefits of adding a Kelvin connection to TO-247 packaged SiC JFET cascodes is explained
along with guidance on how to use these devices in circuits.
What you’ll learn:
- How to apply SiC JFET cascodes with Kelvin connections
- How to reduce switching losses and gate ringing in SiC power devices by using Kelvin connections
- How to understand the impact of lead inductance on gate bias and switching in wide-bandgap power devices
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