Matching Driver IC And FETs Bring GaN Benefits To Low-Voltage POL Converters
by Ron Vinsant, uPI Semi Mountain View, Calif., How2Power Today, Dec 13 2019
Focus:
Using higher switching frequencies (>1 MHz) in lower voltage (12 V to 1 V) point-of-
load converters (POLs) leads to smaller inductors, less output capacitance and the
potential for increased control loop bandwidth, which enables less output capacitance
to meet voltage excursion requirements during fast load transients. These benefits
can’t be obtained using silicon MOSFETs without sacrificing efficiency. However, due
to the recent advent of low-voltage GaN FETs and matching drivers, giving up
efficiency is no longer necessary. This article demonstrates the performance
improvements that can be obtained when using GaN FETs in combination with GaN FET
drivers in 12-V to 1-V point-of-load converters. The example design described here
uses the uP1966D, a dual-channel, synchronous driver IC from uPI Semiconductor in
combination with an EPC2100 GaN asymmetrical half-bridge FET from Efficient Power
Conversion. The efficiency of this POL design is compared with that of a silicon-based
solution. The article begins with a description of the driver and includes details of
POL circuit operation and pc-board design.
What you’ll learn:
- How to obtain high efficiency at high switching frequencies in low-voltage point-of-load converters by using GaN FETs and matching drivers
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