Developing A 25-kW SiC-Based Fast DC Charger (Part 6): Gate Drive System For Power Modules

by Karol Rendek, Stefan Kosterec, Rachit Kumar, Didier Balocco, Aniruddha Kolarkar, Parthiv Pandya and Will Abdeh, onsemi, Phoenix, Ariz., How2Power Today, Oct 15 2021

Focus:
Part 6 of this series focuses on the gate-drive circuitry needed to drive SiC MOSFETs. This article is based on the lessons learned while building a 25-kW fast EV charger using new SiC modules from onsemi. This part describes how to design and tune the coupled gate driver-and-SiC MOSFET combination in a high-power application. It uses galvanically- isolated IGBT gate drivers as a starting point and introduces improvements with new dedicated galvanically isolated SiC gate drivers. The article begins by explaining the different gate drive requirements for SiC MOSFETs versus Si IGBTSs and SJ MOSFETs. This is followed by discussions of specific requirements For A 25-kW application, implementing the SiC gate driver, simulation of the gate driver design, and PCB layout guidelines.

What you’ll learn:

• How to design the gate drive circuitry for high power SiC MOSFET power stages
• How to understand the differences in gate drive requirements for SiC MOSFETs vs. Si IGBTSs vs. SJ MOSFETs

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