by Filippo Scrimizzi and Giusy Gambino, STMicroelectronics, Catania, Italy, How2Power Today, Apr 15 2022
Focus:
An advanced trench MOSFET (STMicroelectronics’ STH200N10WF7-2) offers improved linear-mode
ruggedness, thus providing excellent performance in 48-V telecom, server, industrial and
motor drive applications. This article describes some of the applications requiring a
combination of linear-mode and ohmic-region performance, explaining how their requirements
influence the optimization of MOSFET characteristics in the design of ST’s new wide-SOA
device. Specifically, the article discusses the influence of the thermal coefficient of
the drain current on SOA and linear-mode operation, and compares this characteristic in
the
wide-SOA trench MOSFET versus a standard STripFET F7 series trench MOSFET. It also
compares the transfer characteristics and drain current stability of these two devices
against the best competing device (in terms of linear-mode ruggedness) on the market.
Finally, the linear-mode operation of the wide-SOA device is assessed in a telecom-type
hot-swap application versus that of existing trench MOSFETs.
What you’ll learn:
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