Spurious Turn-On Investigation For SiC MOSFETs In Hard-Switched Half-Bridges

by Nico Fontana, Infineon Technologies Austria, Villach, Austria, How2Power Today, Aug 15 2024

Focus:
High-voltage 650-V and 750-V SiC MOSFETs are enablers for hard-switching half-bridge topologies but may experience spurious turn-ons. While not well documented, these turn-ons can increase switching losses and, in worst case, device failures. To understand these effects better, an in-depth study was conducted and the results are presented here. Specifically, a series of double-pulse tests were performed to compare the reverse- recovery charge of commercially available SiC MOSFETs under unipolar versus bipolar driving. Based on the results, some guidance is offered on the acceptability of both unipolar and bipolar gate drive, enabling designers to take advantage of the benefits of unipolar drive.

What you’ll learn:

• How to understand the benefits and suitability of unipolar drive for hard-switched SiC MOSFETs in half-bridges
• How to understand the causes of spurious turn-ons for SiC MOSFETs in hard-switched half- bridge power circuits
• How to evaluate the susceptibility of SiC MOSFETs to spurious turn-ons in in hard-switched half-bridge power circuits

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