Optimizing Selection Of Low-Voltage Superjunction MOSFETs In Automotive Applications

by Sacha J. Cazzitti, University of Manchester, and Christian Radici, Nexperia, Manchester, U.K., How2Power Today, Jan 15 2026

Focus:
The parasitic inductance within the switching loop of automotive application circuits, like dc-dc converters, motor drives, and isolation switches, strongly affects the level of device ringing after a switching event, influencing oscillation frequency and damping. While these phenomena are well documented, the impact of internal MOSFET parameters like die area and layout have not been investigated as extensively. In this article, the authors examine how the active area and integrated snubber area within low-voltage silicon superjunction (SJ) MOSFETs employed in a half-bridge configuration influence switching losses, ringing, and EMC performance. They use this analysis to provide guidelines for selecting optimal SJ MOSFET device structures—and in turn specific devices—for various automotive applications. (Although SJ MOSFETs have long been available at 650 V and above, Nexperia has made them an option at lower voltages such as the 40-V devices discussed here.)

What you’ll learn:

• How to select low-voltage superjunction MOSFETs for automotive power electronics applications
• How to understand the impact of superjunction device structures on the performance of low- voltage power MOSFETs
• How to understand the relative importance of power MOSFET conduction and switching losses versus EMC performance in automotive applications

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