by Alan Elbanhawy, Director, Computing and Telecommunications Segments Advanced Powersystems Center, Fairchild Semiconductor, San Jose, Calif., Power Electronics Technology, Apr 01 2005
Focus:
Equations are derived that determine the susceptibility of a given MOSFET to shoot-through in synchronous buck converter designs including applications with sub-nanosecond rise and fall times. The impact of MOSFET gate inductance and source inductance on shoot-through are analyzed.
What you’ll learn:
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