3rd Generation Silicon Carbide Schottky Diodes Pave theWay for Energy Efficient Power Solutions
by Fanny Björk, Jon Hancock, Roland Rupp, Gerald Deboy; Automotive, Industrial & Multimarket business group at Infineon Technologies AG, Power Electronics Europe, Mar 30 2009
Focus:
In Infineon's third-generation SiC Schottkys diodes, a new die-to-package mounting technology improves steady-state thermal resistance and transient thermal impedance, which allows a given die to run cooler or permits use of a smaller die size for a given current rating. The latter option leads to lower device capacitances. Article discusses the impact of 3rd gen 600-V SiC schottkys on power factor correction (PFC) application using a 1000-W CCM PFC converter to demonstrate an improvement in light-load efficiency. Article also discusses how 1200-V 3rd gen SiC Schottkys are beneficial as freewheeling diodes for ultrafast IGBTs, enabling lower losses or higher switching frequencies in applications suchs as solar power inverters.
What you’ll learn:
- How to understand the benefits of Infineon's third-generation SiC Schottky diodes, particularly in PFC applications
Notes:
Article is found on pages 24-27 of April 2009 issue.
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