How2 Understand eGaN Transistor Reliability

by Yanping Ma, PhD, Efficient Power Conversion, El Segundo, Calif., How2Power Today, Oct 22 2010

Focus:
In June 2009, Efficient Power Conversion introduced the first enhancement-mode gallium nitride-on-silicon power transistors designed specifically as replacements for power MOSEFTs. Referred to as eGaN devices, these high electron mobility transistors (HEMTs) were subjected to a wide variety of stress tests under conditions that are typical for power MOSFETs used in switch-mode power conversion. These included numerous tests to assess device stability under various bias, temperature, and humidity conditions as well as operational life under dc-dc converter operating conditions, and ESD testing. This article describes how these tests were conducted, presents test results, explains what the results mean to power supply designers, and how they validate the readiness of the new GaN devices for use in commercial applications. In addition, the article discusses potential mechanisms for device degradation in GaN devices (such as current collapse and gate-leakage degradation), how they were addressed by EPC in their device designs, and test results concerning these issues. Areas targeted by EPC for improvement in future device designs are also discussed.

What you’ll learn:

• How to understand what levels of reliability are offered by EPC's eGaN power transistors
• How to understand potential failure mechanisms in GaN transistors

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