IGBT With Intrinsic Body Diode Improves Performance Of Single-Ended-Resonant Inverters In Induction Heating Applications

by Jae-Eul Yeon and Min-Young Park, Consumer Power System Team, HVPCIA, Fairchild Korea Semiconductor, Bucheon, Korea, How2Power Today, May 15 2013

Focus:
When compared with the conventional non-punch-through IGBT, the field-stop IGBT provides lower saturation voltage drop and lower switching losses, making it better suited for induction heating (IH). The integration of an anti-parallel diode on the IGBT die through use of shorted-anode technology made the field-stop IGBT even better for IH. Fairchild has further enhanced this technology in its second-generation field-stop shorted-anode trench IGBT with intrinsic body diode. After discussing the requirements of IH applications, the authors describe the structure and characteristics of the new IGBT that make it most effective in single-ended-resonant inverters used in IH designs. When compared with previous devices, the new IGBT trades off slightly higher Vce(sat) for a much-reduced tail current and much lower tail current off losses (Eoff). This allows the new IGBT to perform better at higher switching frequencies, where induction heating efficiency is better. With previous devices, the IGBT’s large tail current (and associated losses) was a factor limiting the switching frequency of the inverter. Experimental results presented here show that the new IGBT achieves much-lower tail current losses than competing devices in exchange for only slightly higher turn-off losses.

What you’ll learn:

• How to reduce high-frequency losses of single-ended resonant inverters used in induction cookers

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