GaN Power Devices Enable High Efficiency Totem Pole PFC
by YiFeng Wu and Liang Zhou, Transphorm Inc., Bodo's Power Systems, May 01 2013
Focus:
The introduction of 600-V GaN-on-silicon power transistors (HEMTs) with their inherently low reverse recovery charge (Qrr) and low on-resistance is making it possible to implement power factor correction (PFC) boost converters using the previously impractical totem-pole PFC topology. This topology overcomes one of the shortcomings of other bridgeless PFC topologies--high common-mode EMI--while requiring fewer fast semiconductor devices and achieving high efficiency. Article begins with a review of existing PFC topologies including the conventional one with line-rectifying bridge and the bridgeless alternatives and discusses the challenges of implementing the totem pole PFC with silicon MOSFETs. It then discusses on-resistance and Qrr advantages of Transphorm's GaN HEMTs; switching of totem-pole PFC using GaN HEMTs; and the implementation and performance of a totem-pole PFC circuit prototype.
What you’ll learn:
- How to understand the benefits of using GaN HEMTs in the design bridgeless PFC boost converters
- How to understand the operation, benefits, and design requirements of the bridgeless totem-pole PFC topology
- How to overcome common-mode noise and EMI in the design of bridgeless PFC boost converters
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