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PQFN With Ribbon Bond Boosts Power MOSFET Performance While Reducing System Cost For Automotive Applications

by Jifeng Qin, International Rectifier, El Segundo, Calif. , How2Power Today, Aug 15 2014

Focus:
Developers of automotive electrical systems are driven to improve their efficiency/power density and cost to ensure that they keep pace with industry needs. One of the tools designers rely on to meet these requirements are power MOSFETs. This article discusses the advantages of the PQFN package versus the more-established automotive-qualified MOSFET packages, namely the DPAK, D2PAK and SO-8, and introduces International Rectifier’s (IR) version of the PQFN, a 5 x 6-mm PQFN, which replaces wirebonds or copper clips with a ribbon bond. In comparing the different packages, issues such as power density, package resistance, cost and inspection capability are highlighted. The article also cites some example MOSFET devices in the new IR package and identifies their target applications.

What you’ll learn:

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